<br/>Quantum emitters (QEs) in 2D hexagonal boron nitride (hBN) are extremely bright, stable under harsh conditions, and have the potential for strong coupling in solid-state hybrid devices. However, due to the challenge of precisely and controllably creating these QEs, this potential for coupling into hybrid devices has been difficult to utilize. Motivated by recent studies showing that QEs in hBN tend to form at edges, we use a focused ion beam (FIB) to mill patterned arrays of holes in hBN in an effort to create edge-stabilized quantum emitters. We optically characterize these milled hBN sheets using confocal microscopy and find arrays of bright, localized photoluminescence that match the geometry of the patterned holes and that exhibit single photon antibunching. By optimizing the FIB parameters, we create single QEs with a nearly Poisson-limited yield of 35%, and a 94% chance of creating at least one QE. Using atomic force microscopy to investigate the surface topography near milled features, we find that single QE yield is highest near smoothly milled features on flat regions of hBN. This technique dramatically broadens the usefulness and convenience of hBN QEs and achieves a vital step toward the facile integration of the QEs into large-scale photonic, plasmonic, nanomechanical, or optoelectronic devices.<br/>

Single photon emission at the edge: Nanopatterning quantum emitters in hexagonal boron nitride with ion milling

Macromolecular Chemistry: The Second Century

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ACS Spring 2020 National Meeting & Expo

The official archive and repository for all ACS Meetings & Expositions abstracts and select posters or presentations.