3D chemically bonded nanostructures combine the unique properties of nanomaterials with the periodicity of interconnected structures and the form of bulk materials, giving rise to new physical phenomena. Using the synthetic capabilities of High Pressure confined Chemical Vapor Deposition<sup>1 </sup>(HPcCVD), we have infiltrated semiconductors and metals into 3-dimensional (3D) templates of silica colloidal crystals to create ordered and electrically continuous 3D nanostructures called “metalattices”<sup>2</sup>. However, akin to all nanoscale structures, high surface area to volume ratio in metalattices makes the surface a significant contributor in its electronic properties and therefore surface passivation/modification becomes an important tool in tuning the properties of metalattices. In particular, we have focused on Ge metalattice because Ge, despite its high carrier mobility has suffered inefficiency in electronic applications due to oxidation of its surface which leads to formation of defects. We use a core-shell approach to prevent oxidation of Ge metalattice surface by forming a uniform Si shell around Ge core using HPcCVD. Raman spectroscopy and Energy Dispersive Spectroscopy with TEM were used to confirm formation of polycrystalline Ge core and amorphous Si shell. Further, using X-ray Photoelectron Spectroscopy, we have confirmed absence of germanium oxides. Additional microscopic insight into the structure of Ge metalattice was obtained using Electron Energy Loss Spectroscopy (EELS). We have found evidence of quantum confinement in Ge core which originates from the structure of metalattice. EELS data also suggests inter-diffusion of Si and Ge near the Si shell and is complemented by presence of Ge-Si vibration mode in Raman spectroscopy. Both the degree of confinement and the extent of inter-diffusion can serve as parameters for tuning the electronic structure of Ge metalattices. This understanding and control of Ge metalattice surface along with the tunability in the properties allows for potential application of Ge metalattice in devices.

Synthesis of oxide free 3-dimensional germanium nanostructures using a core-shell approach

Macromolecular Chemistry: The Second Century

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ACS Spring 2020 National Meeting & Expo

The official archive and repository for all ACS Meetings & Expositions abstracts and select posters or presentations.