Bright III-V semiconductor quantum dots are of recent interest due to the lack of significantly toxic elements (i.e. cadmium). While great advancements have been made towards preparing high quantum yield InP materials, most synthetic protocols create QDs with poor color saturation. A potential cause is the use of overly reactive phosphorus precursors such as tris-trimethylsilyl phosphine, (TMS)3P. Presented is an attempt to mollify the reactivity of (TMS)3P via the use of larger ligands, specifically triethyl and tributyl silanes. The reagent tris-triethylsilyl phosphine (TES)3P results in brighter InP QDs with narrower emission spectra. Furthermore, the synthesis of larger, red-emitting dots is more facile with (TES)3P compared to (TMS)3P. However, the butyl analog was not as effective for InP QD preparaion, causing us to conclude that stearically encumbering the P3- anion is not the final solution for preparting color-saturated III-V QDs.

Sterically encumbered phosphine precursors for InP quantum dot synthesis

Macromolecular Chemistry: The Second Century

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ACS Spring 2020 National Meeting & Expo

The official archive and repository for all ACS Meetings & Expositions abstracts and select posters or presentations.