The high dielectic constant (k) of hafnium oxide (HfOx) makes it of interest for a variety of applications. We have been exploring routes to generate nanomaterials of HfOx using solution precipitation routes and dispersing them into polymeric systems.  Our initial efforts have focused on the utility of derivatives of hafnium t-butoxide (Hf(OBut)4), hafnium ethoxide (Hf(OEt)4) as precursors to HfOX nanomaterials. Of particular interest is the need to develop nanowires; however, none of the standard solution routes investigated with the OBut and OEt precursors have led to wire morphologies. We initiated a study using electrospinning, and forcespinning methodologies that could directly form ceramic nanowires from the precursor, and carboxylic acid modified species. Sandia National Laboratories is a multi-program laboratory managed and operated by Sandia Corporation, a wholly owned subsidiary of Lockheed Martin Corporation, for the U.S. Department of Energy's National Nuclear Security Administration under contract DE-AC04-94AL85000.

Hafnium alkoxide derivatives for production of high dielectric constant nanomaterials

243rd National Meeting (2012)

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