The use of block copolymers in the lithographic process is an important strategy to augment and enhance the capabilities of current tools in nanomanufacturing.  We employ electron beam and 193 nm immersion lithography and traditional photoresist materials to fabricate chemically patterned surfaces.  Block copolymer films are deposited on the surfaces and annealed.  By judicious choice of the chemistry and the geometry of the patterned regions, the domain structure of the block copolymer film may be directed to assembly into desirable architectures for applications such as bit patterned media  or integrated circuits.  Challenges that remain in materials and process development include delineation of the degree of perfection that can be obtained, and fabrication of sub 10 nm features.  Here we report 1) the relationships between attributes of the chemical pattern and the degree of perfection of the assembled block copolymer films, 2) two approaches to processing films on chemical patterns to enable assembly of high resolution copolymers with differing block surface energies, and 3) design principles for the synthesis of new block copolymers for directed self-assembly with sub 10 nm features.

Block copolymers and lithography

243rd National Meeting (2012)

The official archive and repository for all ACS Meetings & Expositions abstracts and select posters or presentations.