Atomic layer deposition (ALD) has gained attention in recent years due to the continuous miniaturization of microelectronics devices. ALD enables the deposition of conformal, nano-meter scale films with accurate thickness control, due to a self-limiting growth mechanism. To serve as viable precursors for ALD, precursors should be volatile and thermally stable at the deposition temperatures. Our goal is to synthesize volatile and thermally stable first row transition metal complexes for the deposition of transition metal thin films. Treatment of MCl2 (M = Cr, Mn, Fe, Co), NiCl2(CH3CN),  or MgBr2 with two equivalents of K(RNN=C-C=NR'), where R = tBu and R' = tBu or NMe2, afforded M(RNN=C-C=NR')2 in moderate to high yields. All complexes are volatile, and sublime between 100 to 150 �C at 0.05 torr. Additionally, they have high thermal stabilities, and thus may serve as ALD precursors.

Development of first row transition metal precursors for the deposition of metal films by atomic layer deposition

244th National Meeting (2012)

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