Thin ZnxCd1-xS films are used in copper indium gallium diselenide (CIGS) solar cells. Grading x to widen the band gap of the ZnxCd1-xS layer away from the interface with CIGS is desired to increase light transmission while decreasing the conduction band offset between these layers. We demonstrate the ability to manipulate Zn fraction, x, as a function of distance from the ZnxCd1-xS - CIGS interface and describe the fundamental factors that govern the evolution of the film composition as a function of depth in chemical bath deposition from cadmium and zinc sulfate solutions. The entire range of compositions ranging from cubic ZnS to hexagonal CdS could be deposited. Using Auger depth profiling and high-resolution transmission electron microscopy, we show that a CdS rich alloy film forms at the ZnxCd1-xS - absorber interface. This Cd-rich layer is followed by a Zn-rich ZnxCd1-xS structure that is favorable for solar cells.

Synthesis of compositionally graded Zn<sub>x</sub>Cd<sub>1-x</sub>S films using chemical bath deposition

245th National Meeting (2013)

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Synthesis of compositionally graded ZnxCd1-xS films using chemical bath deposition

Synthesis of compositionally graded Zn_xCd_1-xS films using chemical bath deposition