Iron pyrite (FeS2) is an earth-abundant semiconductor with near-ideal properties as absorber layer in thin film solar cells. However, all reported devices suffer from a low open-circuit voltage (VOC), limiting their efficiency. To understand and overcome this limitation, we studied ultra-pure pyrite single crystals and thin films grown by a variety of techniques. We present temperature-dependent conductivity and Hall effect measurements and discuss electrical transport in these materials.  While single crystals display n-type conductivity with high carrier mobility and low carrier concentration, thin films display p-type conductivity with low carrier mobility and high carrier concentration. We observe a strong surface effect and compensation of n-type single crystals into p-type conductors, which is explained with surface defects that induce acceptor states. Ongoing work on passivation of these defects will be presented as part of our efforts to produce efficient heterojunction solar cells with pyrite thin film absorber layers.

Electrical transport, carrier type, and compensation in iron pyrite (FeS<sub>2</sub>) single crystals and thin films

245th National Meeting (2013)

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Electrical transport, carrier type, and compensation in iron pyrite (FeS2) single crystals and thin films

Electrical transport, carrier type, and compensation in iron pyrite (FeS₂) single crystals and thin films