We present a simple method for generating arrays of vertically-aligned ZnO nanowire (NW) arrays with tailored electrical properties, suitable for photodetector and photovoltaic applications. ZnO NWs were synthesized on Si substrate using a hydro-thermal method, producing dense and highly organized vertical ZnO NW (~100 nm) arrays as revealed by SEM. The vertical geometry of the NW arrays facilitated further processing of the NW structures and streamlined in-situ characterization of individual NWs as well as entire NW ensembles. The I-V characteristics of the ZnO NWs were measured using current-sensing atomic force microscopy, where an AFM tip made contact with individual metalized ZnO NWs while the growth substrate provided the back contact. Compared with arrays of as-grown ZnO NWs, the metalized top contacts of NWs resulted in improved I-V characteristics with good rectifying behavior, attributed to Schottky barrier formation for the gold deposition and stable ohmic contact formation for aluminum and gold.

Electrical properties of vertically aligned ZnO nanowires investigated by current sensing AFM and Kelvin probe force microscopy

245th National Meeting (2013)

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