Gallium oxide thin films have multiple uses in the field of electronics as readily available, though costly, chemical components necessary to make semiconductors out of small silicon wafers. It is the cost of these thin films that generally dictates the price of electronics in the market therefore, the following research attempts to reduce the cost of producing the semiconductors by analyzing the projected increase in volatility of �-Diketonante derivatives between Ga(acac)3, Ga(tfac)3 and Ga(hfac)3, as different acac  structures are added to the overall molecule, as well as the formation of a solid crystal structure for each of the molecules. Through the use of NMR and IR spectroscopy, X-ray spectroscopy, as well as thermogravimetric analysis, the derivatives of the gallium oxide precursors should be found to have both an increased volatility and crystalline stability as more fluorinated acac structures are added to the overall compound.

Tuning the volatility of gallium oxide thin film precursors

247th National Meeting (2014)

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