Direct laser writing (DLW) lithography is a useful way to generate microscopic patterns for lab-on-a-chip devices. We have developed a simple and inexpensive platform for the creation of these initial patterns using a homemade acrylic resin, a 405 nm laser diode, and a fluorescence microscope. To create sub-micrometer linewidths, we included a radical scavenger into the photoresist to quench excessive amounts of radicals generated from the laser exposure. In this poster we compare various formulations of the resin and we present a model for the radical polymerization in our photoresist. The model utilizes the method of finite differences to numerically solve a system of parabolic partial differential equations that describes the diffusive behaviors of particles in the photoresist. The model also makes use of Markov chains to simulate the step-wise polymerization of the photoresist. The parameters in the model were determined by fitting the model on experimentally-obtained data.

Using and modeling a radical scavenger to improve the resolution in one photon direct laser writing lithography

248th National Meeting (2014)

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