The Verani group is interested in the use of metallosurfactants for applications in molecular electronics. This interest arises from the notable behavior of earth-abundant transition metal complexes on molecular wires, transistors and logic gates. Our preferred method for surface deposition of the metallosurfactants is Langmuir-Blodgett physisorption as to minimize the viability of Schottky barriers. In this symposium we will focus on current efforts to understand the mechanisms of rectification �as characterized by an asymmetric I/V curve associated with unidirectional current transport� on (i) iron(III) and manganese(III) complexes with an asymmetric [N2O3] phenolate-rich ligand and (ii) iron(III) and copper(II) complexes coordinated to saloph (salycilphenylenediimine) ligands. In both cases the metallosurfactants containing a 3d5HSFe(III) ion display rectifying behavior whereas the species with 3d4HSMn(III) and 3d9Cu(II) do not show such behavior. Based on experimental redox potentials, the Fe(III) systems seem to have the metal-centered SOMOs (singly-occupied MOs) matching the Fermi level energies of the Au electrodes, thus suggesting that rectification proceeds via an asymmetric molecular mechanism. Funding NSF-CHE 1012413

Understanding the current-rectifying behavior of LB-films of metallosurfactants

248th National Meeting (2014)

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