Transparent electronics has gained traction of the last few years. In particular amorphous mixed metal oxides are emerging as high performance semiconductors for thin film transistor applications, with gallium-doped InGaZnO (IGZO) being one of the most widely studied and best performing systems. Here, we investigate alkaline earth (barium or strontium) doped InBa(Sr)ZnO as alternative, semiconducting channel layers and compare their performance and electrical stress stability with IGZO. In films fabricated by solution-processing from metal alkoxide precursors and annealed to 450 �C we achieve high field-effect electron mobility up to 26 cm2V-1s-1. Electrical bias stress measurements reveal Sr- and Ba-doped semiconductors to exhibit enhanced electrical stability and reduced threshold voltage shift compared to IGZO. This enhancement in stability can be attributed to the higher Gibbs energy of oxidation of barium and strontium than gallium ?GfBa -1051 kJ/mol, ?GfSr -1134 kJ/mol, ?GfGa -661 kJ/mol @ 298K. In addition, we demonstrate a facile 'ink on demand' process which utilize the alcoholysis reaction mechanism for alkyl metal precursors thus eliminating the need for complex synthesis and purification protocols to prepare the molecular alkoxide chemical precursors. We show that it is possible to solution-process these materials at low process temperature (225-200 �C yielding mobilities up to 4.4 cm2/Vs) and demonstrate a facile 'ink-on-demand' process for these materials which utilizes the alcoholysis reaction of alkyl metal precursors to negate the need for complex synthesis and purification protocols. Figure 1. <img src='https://acs-archive-assets2.s3.amazonaws.com/241nm/uploads/61845_sidewiew.jpg' alt='' />

Fabrication of highly stable alkaline earth doped transparent InZnO semiconductors for thin film transistors via molecular alkoxide based chemistries

248th National Meeting (2014)

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