The directed self-assembly (DSA) of block copolymers (BCPs) is a promising resolution enhancement technology to extend lithographic patterning capability. Chemoepitaxy and graphoepitaxy-based DSA approaches have been demonstrated to generate arrays of sub-lithographic features. In recent years, the availability of semiconductor grade DSA materials and fab-compatible processes has caused an explosion of DSA activity in the semiconductor industry. Now, the focus has turned to the issue of how one can use BCP DSA to make suitably complex, device relevant patterns. The sub-lithographic BCP domain sizes which make DSA so attractive in overcoming the resolution limitations of optical lithography tools at the same time require levels of edge placement control in any cut (or customization) step that challenge the capabilities of those same exposure tools.To address this challenge, we have developed self-aligned customization processes for chemoepitaxy and graphoepitaxy BCP DSA in which select customization information is incorporated into the guiding prepatterns. While examples of both methods will be presented; the focus of the talk will be a self-aligned customization technique for chemoepitaxy, which we have named CHEETAH (CHemoEpitaxial Etch Trim using a self-Aligned Hardmask). Examples of customized DSA-based patterns prepared using CHEETAH for sample device layouts will be shown. In addition, some fundamental studies of this process will be discussed.

Self-aligned customization of block copolymer directed self-assembly for device-relevant patterning

248th National Meeting (2014)

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