Block copolymers (BCPs) can self-assemble into periodic nanoscale structures on the order of 1-100 nm which makes them attractive for next-generation lithography. The pattern obtained from a BCP assembly must be transferred into a functional substrate. Key to transferring the pattern is selective removal of one of the BCP domains via either a wet or dry etch. However, both of these methods suffer from drawbacks which prevent clean pattern transfer with full feature retention of the original BCP relief mask. To avoid these problems, a BCP was synthesized containing a low ceiling temperature polymer. The low ceiling temperature block is stabilized with an acid-labile end group, which prevents degradation during thermal annealing. In response to an acid catalyst, this block depolymerizes efficiently and self-develops as the monomer evaporates. Thin film studies of this BCP, when mixed with a photoacid generator, demonstrate self-assembly into ordered domains followed by depolymerization of the low ceiling temperature block upon exposure to UV light.

Acid-sensitive, self-developing block copolymers for lithographic applications

248th National Meeting (2014)

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