As we have previously demonstrated, complementary semiconducting polymer blends(c-SPBs) can be used to achieve melt-processed high performance organic field-effect transistors(OFETs). However, prior to this study, the melt-processing required temperatures higher than 160°C. Here we report the use of asymmetric sidechains to design a matrix polymer with a melting point lower than 120°C. The resulting c-SPBS containing as low as 5 wt% of the complementary tie-chain polymer could be melt-processed at 130°C to fabricate OFET devices with hole mobility approaching 1.00 cm2/Vs, threshold voltages below 5V, and ION/OFF greater than 105. This combination of efficient charge carrier transport and considerably low processing temperature in polymer blends becomes a promising venue for solvent-free OFET fabrication.

Complementary semiconducting polymer blends melt-processed at 130°C for organic field-effect transistors with hole mobility approaching 1.0cm2/Vs

253rd National Meeting (2017)

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