Quantum dot Light Emitting Diodes (LEDs) utilize semiconducting nanocrystals that possess properties that vary from their bulk materials making for a more cost effective and tunable fluorescence color emission. Due to these characteristics the goal was to maximize the fluorescence efficiency of quantum dots that could be incorporated in LED devices. Using an insulating layer to minimize surface imperfections should increase the fluorescence of the resulting crystals. Previous methods to achieve insulating shells including Zinc Sulfide (ZnS) always required use of the hot injection method. A shell of ZnS was grown on Cadmium Sulfide (CdS) and Cadmium Selenide (CdSe) quantum dot cores utilizing the room temperature colloidal atomic layer deposition (c-ALD) method. This ZnS layer possessed a wider band gap for insulation. The resulting core shell quantum dots showed significantly increased fluoresce in comparison with the cores and thus made for a better material to be incorporated into quantum dot LED prototype devices.

Room temperature monolayer ZnS growth on CdS and CdSe cores

253rd National Meeting (2017)

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