Atomic layer deposition (ALD) is a thin film deposition method employing self-saturated surface reactions. Since ALD has several superior properties for nanoscale device fabrications, such as excellent conformality, large area uniformity, and process compatibility over the conventional thin film deposition methods, it has been widely applied for various high technology applications from semiconductor to display devices. ALD can be an effect route to form materials with precise controllability in other applications. In this work, we extended ALD researches to fabrication of electronic textiles for wearable electronics. Inspired from the conventional dyeing technology, we coat T-shirts fabricated by cotton, with metal layers (Pt and Ru) through organic-inorganic hybridization in atomic level. The ALD-Pt-coated T-shirts showed high electrical conductivity and high mechanical durability even after mechanical wrinkling test and a real washing test. The chemical bondings and interfacial structures between ALD metal thin films and organic textile materials, such as cotton, Nylon, wool, silk, and Kevlar, were investigated by theoretical calculation and precise nanoscale analysis techniques. A capacitive type pressure sensor was fabricated by using the highly conductive ALD-modified textile fibers, and applied to seat sensor for vehicle. In addition, for commercial productions, the color of ALD-modified textile was controlled by adjusting index of refraction. Refractive index of multilayered TiO&lt;font size="1"&gt;2 &lt;/font&gt;and Al2O3 was theoretically designed and experimental results showed consistency on the Pt-coated textiles.

Atomic layer deposition on T-shirts

255th National Meeting (2018)

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