(Dialkylamino)alkylsilanes, varying in degree of dialklyamino substitution, have been explored for use in blocking ALD and CVD on silicon-based dielectrics. In 2010, Roy Gordon reported use of (dimethylamino)trimethylsilane and bis(dimethylamino)dimethylsilane towards selective Mn CVD on Cu versus silicon-based dielectric. Here, the adsorption behavior of bis(dimethylamino)dimethylsilane on H-Si(100) and native SiO2 surfaces was studied to extract the process conditions that favor selective attachment of bis(dimethylamino)dimethylsilane on SiO2 over H-Si(100), where the overall objective is selective ALD on H-Si(100). For the conditions explored, DFT and in-situ IR and XPS suggest bis(dimethylamino)dimethylsilane reaction with SiO2 yields a mixed product distribution of dual- and single-ligand exchange adducts, with the concentration of dual exchange adduct maximized at Tsubstrate = 200 C. Under the same conditions, bis(dimethylamino)dimethylsilane adsorption on H-Si(100) is observed for Tsubstrate ≥ 300 C and likely occurs via reaction at oxidized sites. The study indicates product distributions are independent of exposure method for the substrates and temperatures probed

A tale of two coordination modes: Diaminoalkylsilane adsorption on dielectric and silicon substrates

255th National Meeting (2018)

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