Heterojunctions of semiconductors and metals are the fundamental building blocks of modern electronics. Coherent heterostructures between dissimilar materials can be achieved by composition, doping or heteroepitaxy of chemically different elements. Here we report, the formation of coherent single-layer MoS2 heterostructures, which are chemically homogenous with matched lattices, but show electronically distinct semiconducting (1H phase) and metallic (1T phase) domains when deposited on Au(111) by mechanical exfoliation. The exfoliation technique we developed and employed in these studies, eliminates the tape residues usually found in other exfoliation methods, and also leads to single-layer MoS2 with millimeter size. Raman spectroscopy, X-ray photoelectron spectroscopy (XPS), scanning tunneling microscopy (STM) and scanning tunneling spectroscopy (STS) have been collectively employed to elucidate the nature of the heterostructures of MoS2/Au. Our work provides some intriguing guides to the production of macroscale two-dimensional heterostructures, which represent unique candidates for future electronic devices and applications.

Domain structures in mechanically exfoliated single-layer MoS2 on Au(111)

2019 Fall National Meeting

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