Ion motion remains an important topic in halide perovskite semiconductors. We explore how light- and bias-drive ion motion in halide perovskites, from early chemical evidence confirming photoinduced halide motion using imaging mass-spectroscopy, to recent scanning kelvin probe microscopy studies of ion transport under bias. We show that the ability of bias stress (poling) to induce non-radiative defects due to ion migration hinges on a combination of both ion motion and redox processes associated with injected charge carriers. We study low-dimensional Ruddlesden-Popper phases that are of interest as materials for potentially improved stability and reduced ion motion, and we find that ion motion exists in 2D perovskite phases, and that it depends on the layer number and dimensionality of the perovskite.

Ion transport in halide perovskites: Dimensionality, ions, and electronic carriers

ACS Spring Meeting 2021

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