Ga2O3 is a material of rising interest for many optoelectronic applications because of the ultra-wide bandgap and the high chemical and thermal stability exhibited by its nanostructures. Ga2O3 nanowires have been grown in random orientations, but the synthesis of well-aligned Ga2O3 arrays presents more of a challenge. The effect on nanostructure alignment caused by depositing ZnO or Ga2O3 nanoparticles as a seed layer on a variety of substrates followed by chemical vapor deposition (CVD) of Ga2O3 was studied. The seed layer was grown from a gallium salt solution and annealed at a low temperature. A mixture of graphite and bulk Ga2O3 was used as the precursor in the solvent-free CVD method. The resulting substrates were characterized by scanning electron microscopy (SEM), energy-dispersive X-ray spectroscopy (EDS), and powder X-ray diffraction (XRD).

Investigating the epitaxial growth of Ga2O3 nanowires by chemical vapor deposition on Si(100) substrates with metal oxide seed layers

ACS Spring Meeting 2021

The official archive and repository for all ACS Meetings & Expositions abstracts and select posters or presentations.