Atomic precision advanced manufacturing (APAM) leverages the chemical contrast created by selectively desorbing a hydrogen or halogen resist to expose highly reactive dangling bond patterns on silicon. The high reactivity of these dangling bonds allows selective deposition of molecular precursors into de-passivated regions at scales ranging from atoms to microns, but the high reactivity of these dangling bonds also limited the use of APAM-patterned surfaces to ultra-high vacuum (UHV) environments. Recently, bromine and iodine were shown to passivate the dangling bonds on APAM-patterned H-Si to provide ambient stability on the order of hours. While historically used to fabricate donor-based quantum devices, the chemical contrast produced by the APAM process can now also be leveraged in area-selective atomic layer deposition (AS-ALD) processes. The recently demonstrated H/halogen co-patterned surface can be removed from UHV and integrated with ALD processing tools for selective film growth templated by the APAM pattern. This is similar to techniques used in AS-ALD and bias mode atomic force microscope (AFM) nanolithography which leverages differences in surface chemistry, such as oxide versus hydrogen, to template growth. In this work, we demonstrate AS-ALD templated on Si utilizing APAM co-patterning methods. This points to a generalizable path for templating growth of materials by combining state-of-the-art atomic-precision fabrication capabilities with traditional ALD processes.

Area-selective atomic layer deposition templated by atomic precision fabrication

ACS Spring 2022

The official archive and repository for all ACS Meetings & Expositions abstracts and select posters or presentations.