We use cookies to ensure that we give you the best experience on our website Learn more

Home

Saved research

Apr 16, 2020

ACS Spring 2020 National Meeting & Expo

Investigation of the use of MoS2 in radiation-hard electronics

2D

TMDs

Gammaray

Irradiation

MoS2

Raman

Photoluminscence

XPS

Abstract

57

Views

57

Views

Abstract

Fullscreen

thumbnail

Keywords

2D

TMDs

Gammaray

Irradiation

MoS2

Raman

Photoluminscence

XPS

Abstract

Recently, 2D materials have become one of the most popular materials to study in many areas of engineering due to the availability of atomically thin layers of van der Waals bonded solids. These advanced materials have been already started to use in 2D electronic, mechanical, and optical devices. Soon these materials will replace other materials in a variety of space applications. It is of great importance to study the effect of irradiation on the 2D materials if these materials are to be used in radiation-hard electronics. The effect of gamma-ray (γ-ray) irradiation on the material characteristics of nanometre scale films of molybdenum disulphide (MoS2) has been investigated. 3.2, 4.5, and 5.2 nm thick MoS2 films (measured by atomic force microscopy) were grown on Si by using a two-step synthesis method (sputtering of Mo, followed by sulphurisation). The samples were subsequently exposed to γ-ray irradiation (dose of 120 MRad). Dramatic chemical changes in the MoS2 films after irradiation were characterised by micro-Raman spectroscopy, X-ray photoelectron spectroscopy (XPS), and optical microscopy. Micro-Raman spectroscopy showed the disappearance of the E2g1 and A1g modes after irradiation. XPS revealed that the MoS2 crystal structure was converted to molybdenum oxide (MoOx). It is hypothesised that S vacancies are formed due to the γ-ray irradiation, which subsequently transforms MoS2 to MoOx.

Company

Legal

Follow us

© Copyright 2019 Morressier GmbH. All rights reserved.

© Copyright 2019 Morressier GmbH.
All rights reserved.