Bandgap excitation of n-type semiconductors such may result in interfacial acid-base chemistry and/or redox chemistry. Adduct formation between Lewis basic amines and n-CdSe has been shown to passivate surface states and shift the quasi-Fermi level toward the vacuum level. For n-TiO2, acid-base chemistry provides a means to link sensitizing dye molecules to the surface that undergo light driven interfacial chemistry. For the anatase polymorph of TiO2, interfacial electron transfer is acutely sensitive to the presence of Lewis acids. This presentation will provide some links between acid-base and photo-redox chemistry at semiconductor-liquid interfaces.

Acid-base and photoredox chemistry at illuminated semiconductor-liquid interfaces

Macromolecular Chemistry: The Second Century

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ACS Spring 2020 National Meeting & Expo

The official archive and repository for all ACS Meetings & Expositions abstracts and select posters or presentations.