<br/>As a group 14 semiconductor, bulk Ge has a small bandgap and a large Bohr exciton radius making it an attractive semiconductor for various applications, including solar cell technology, photodetectors, and integrated flash memory devices. For such applications, being able to control properties through size, alloying, or shape control is especially attractive. Two of our recent areas of research will be presented: n-type dopant incorporation (Bi, Sb) and shape control through galvanic replacement reactions of GeI<sub>2</sub> with silver. The structural details for Bi-doped Ge will be presented and further efforts with Sb-doped Ge synthesized with microwave-assisted heating will be described. Our current understanding of the reaction parameters necessary for shape control of galvanic replacement reaction with silver will be presented. The chemistry, structure, and composition of these Ge nanoparticles synthesized and investigated to date will be presented.<br/>

Synthesis and structure of n-type doped Ge and Ge nanocrystals

Macromolecular Chemistry: The Second Century

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ACS Spring 2020 National Meeting & Expo

The official archive and repository for all ACS Meetings & Expositions abstracts and select posters or presentations.