Miniaturization of feature sizes is a driving force in the semiconductor industry and has been key in enabling small, low-cost high-powered computing devices. As feature sizes approach the sub-10 nm, new challenges need to be overcome to achieve the benchmarks set by the International Roadmap for Devices and Systems. Current state of the art atomically precise advanced manufacturing (APAM) has successfully demonstrated the formation of devices with atomically sharp features and doping concentrations that exceed the solid solubility of dopant in Si, but the scale-up of these methods is hindered by the specialized UHV equipment required in the current APAM process. On the other hand, molecular monolayer doping (MLD), is a scalable method which utilizes wet chemistry and rapid thermal annealing to produce doped surfaces, however MLD lacks the high doping concentration of APAM methods. The overall goal of this work is to develop new wet chemistry methods, inspired by the MLD process, to produce doping characteristics analogous to those of APAM. This poster will address current experimental progress.<br/><br/>

Molecular doping of Si(100)

Macromolecular Chemistry: The Second Century

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ACS Spring 2020 National Meeting & Expo

The official archive and repository for all ACS Meetings & Expositions abstracts and select posters or presentations.