Halide perovskites are compressible semiconductors that are sensitive to high-pressures. Recently, double perovskites have been proposed as non-toxic alternatives to lead halide perovskites. To understand the fundamental relationships between structure and optoelectronic properties, we studied several double perovskite compositions at high pressure. Pressure-induced changes in structure, bandgap, and electrical conductivity reveal the effects of bond compression and octahedral tilting on semiconductor properties. Furthermore, dramatic changes in conductivity can be understood by studying the effect of pressure on defect energy levels. These insights at high pressure help to inspire the synthetic design of novel perovskites with desirable properties.

High-pressure properties of halide double perovskites

ACS Fall 2020 Virtual Meeting

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