Organic thin film transistor (OTFT) performance is highly materials interface-dependent, and dramatic performance enhancements can be achieved by modifying the semiconductor-gate dielectric interface, although the origin of these enhancements is not well understood.  By combining in-situ sum frequency generation spectroscopy and atomic force microscopy with grazing incidence and reflectance x-ray scattering, we show how the molecular order and orientation of self-assembled hydrocarbon monolayers at the dielectric-semiconductor interface dramatically impacts the overlying semiconductor growth mode, packing, crystallinity, and carrier mobility.  This understanding leads to a reproducible, scalable growth process for highly ordered octadecylsilane (OTS) self-assembled monolayers (SAM) which, in turn, nucleate highly ordered semiconductor films.  The implications for SAM quality on semiconductor crystalline domain size, local molecular orientation of the semiconductor molecules, and OTFT mobility are discussed.

In-situ<i> </i>probe of gate dielectric-semiconductor interfacial order in organic transistors:  Origin and control of large performance sensitivities

243rd National Meeting (2012)

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In-situ probe of gate dielectric-semiconductor interfacial order in organic transistors: Origin and control of large performance sensitivities