Transparent semiconductors, such as zinc oxide can be used for optoelectronic applications.  Zinc oxide and doped zinc oxide thin films were prepared on quartz and silicon substrates by spray pyrolysis, which is an inexpensive method that can be reproduced on an industrial scale. Substrate temperature and precursor concentration proved to be important factors for the growth of a uniform film. Using zinc acetate, the optimum conditions were found to be a precursor concentration of 0.2M, a spray time of 90 seconds and a temperature range 360-400oC. The morphological, optical and electrical properties of the films grown were measured using a scanning electron microscope, a UV/Vis spectrometer and a four point probe.   In addition to the zinc oxide films, ternary films doped with In and Mg have been grown and studied as a function of dopant concentration.

Transparent ZnO and doped ZnO thin films semiconducting thin films grown by spray pyrolysis

243rd National Meeting (2012)

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