Thin-film copper-zinc-tin-sulfur/selenium based Cu2ZnSn(SxSe1-x)4 (CZTSSe) absorber materials are potential candidates for unlimited growth of chalcogenide photovoltaic production beyond 100GWp/year. Due to their reduced content of heavy metals, low cost and readily available constituents, these materials are viewed as the alternatives to the two leading thin-film chalcogenide technologies�CdTe and Cu(In,Ga)(S,Se)2. Recently, CZTSSe solar cells with ~10% power conversion efficiency have been developed in our laboratory by a hydrazine-based hybrid solution-particle approach. Though the [S]:[Se] ratio in CZTSSe can be used to control the band gap in this materials to optimize device performance, in practice controlling the [S]:[Se] ratio is not convenient because of the high volatility of these elements. Band gap control can alternatively be achieved by replacing the larger Sn atom with a smaller Ge atom�i.e., Cu2Zn(Sn1-yGey)Se4 (CZTGSe). Here we will present recent results on hydrazine-processed Ge-substituted CZTS solar cells, demonstrating power conversion efficiencies of >8%.

Hydrazine processed Ge-substituted CZTS solar cells

243rd National Meeting (2012)

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