Back gate nanowire field effect transistors (NW-FET) have been fabricated to investigate the effect of grain size and channel length on transfer characteristics of polycrystalline CdSe nanowires. CdSe nanowires were fabricated by lithographically patterned electrodeposition process (LPNE) on SiO2/Si substrate. Electrical Characterization of NW-FET revealed n-type semiconducting behavior of nanowires. Exposing nanowires to methanolic CdCl2 followed by thermal annealing increased the grain size from 10nm to 80nm and caused phase transformation from cubic to wurtzite structures. Transfer characteristic measurements showed an increase of on current (Ion) and field effect mobility (�eff) by an order of magnitude from 1.94�10-4cm2/V.s to 23.4�10-4cm2/V.s due to this grain growth. Correspondingly, the threshold voltage shifted toward lower values from 20V to 5V.We also studied channel length dependency on transfer properties of CdSe NW-FET. On current and mobility reduced as channel length increased which is attributed to formation of less conductive channels by increasing the length.

Effect of grain size and channel length on mobility and transfer characteristics of lithographically patterned polycrystalline CdSe nanowires

243rd National Meeting (2012)

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