Starting from carbon layers deposited atop silicon oxide, a host of two-terminal switching devices were generated that have the following properties: radiation hardness toward X-rays, protons and heavy ions, stability to >600C, non-volatility, and >10,000 to 1 ON/OFF ratios.  Continued work revealed that the switching was inherent to the underlying silicon oxide structure due to the formation of metallic silicon nanofilaments.  These filaments have now be imaged in situ by transmission electron microscopy using a home-build imaging probe system.  These memories are simple to fabricate en mass, have been built into crossbar architectures, and can be transparent in the visible region affording �invisible memory� on glass and plastic substrates.

From carbon to silicon oxide invisible memories

243rd National Meeting (2012)

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