As n-type semiconductors, amorphous mixed metal oxides, such as indium-gallium-zinc oxide (IGZO), indium-zinc-tin oxide (IZTO), gallium-tin-zinc oxide (GTZO), zinc-indium oxide (ZIO), and zinc-tin oxide (ZTO), have recently received a lot of attention because of their high carrier mobility and good transparency in comparison with amorphous Si for TFT applications; however, they are mostly deposited using sputtering techniques. Compared with conventional vacuum-based techniques, mixed metal oxides deposited by solution processes require high annealing temperatures (>400 oC), which is incompatible with flexible polymeric substrates. In our previous study , ZTO semiconductor is chosen as the channel layer of the metal oxide TFTs to avoid the expensive cost of In and Ga. Zinc acetate and tin (II) chloride were dissolved in 2-methoxyethanol to form ZTO  solutions , and then were spin-coated on SiO2/p-Si substrate to form the TFT channel layer.  After spin-coating, the films were baked at 500 oC for 1 hr. The ZTO TFTs annealed at 500 oC 1 hr shows a mobility of 2 cm2/Vs , a threshold voltage of 10 V, and on/off current ratio greater than 108. Consequently, in this study, we carried out combustion processing as a new route to realize solution growth of ZTO TFTs at low temperatures (<200 oC). The correlation between the Zn/Sn composition and TFT device performance is also investigated to see the feasibility of low-temperature combustion solution process for TFT fabrication.

High performance of zinc-tin oxide thin-film transistors via low-temperature combustion solution process

243rd National Meeting (2012)

The official archive and repository for all ACS Meetings & Expositions abstracts and select posters or presentations.