Suspended graphenes have been attracted not only for their distinctive physicochemical properties but their various applications. Compared the usefulness of graphene membrane, however, it is not easy to produce. Most of them undergo the inaccurate transfer process, which lowers the yield, applications are also limited. Here we developed the direct growth method for the transfer free process. Firstly, 300 nm of Cu films were deposited as a catalyst on SiN substrates, which has 500 um^2 of suspended SiN membrane. After the graphene growth process, adequate regions of SiN membrane were drilled by FIB equipment, which determines the size of suspended graphene. As a final step, the Cu film was partially etched through the drilled regions by dipping the FeCl3 solutions for 10 min. As one of applications, transmission electron microscopy samples were fabricated via low temperature ion coupled plasma chemical vapor deposition (ICP-CVD) process. Through TEM characterizations, we investigate the feasibility of low temperature growth method and compare the basic properties with thermally grown one.

Facile and transfer free fabrication of graphene membranes via direct growth method.

243rd National Meeting (2012)

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