We report a low-cost alternative to e-beam lithography and photolithography for nanoscale graphene device fabrication. Nanoshaving nanolithography based on an atomic force microscope was used to define patterns on octadecanethiol self-assembled monolayers on gold films evaporated on graphene flakes, followed by metal wet etching and/or oxygen plasma etching to develop the pattern on the gold films or graphene, respectively. A few examples of graphene and gold patterns made by this method were demonstrated with feature sizes down to ~ 100 nm. Finally, a graphene transistor with a silicon back gate was fabricated with a graphene channel width of 130 nm and a length of 480 nm. The resulting graphene device is p-type and its corresponding electron and hole mobilities are 1770 and 1600 cm2/Vs, respectively.

Patterning graphene and gold electrodes by nanoshaving nanolithography

243rd National Meeting (2012)

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