Semiconductor nanowires have emerged as promising materials for the development of photonic and electronic devices with enhanced performance. Simultaneous control over both composition and morphology (�nanowires on demand�) would further expand the realm of possible nanowire architectures, but achieving this goal so far has been challenging. I will discuss our recent results on the controlled growth and applications of III-V nanowires, as well as advanced electron microscopy techniques for direct correlation of structural and physical properties with high spatial resolution. We have developed a simple, yet powerful, approach to modulate both the diameter and composition of individual III-V nitride nanowires by adjusting in-situ the nanowire seed particle composition and volume. By elucidating the underlying mechanisms controlling structural evolution, we demonstrated the synthesis of axial and radial nanowire heterojunctions, compositionally tunable ternary nanowires, and their controlled doping.  Finally, applications of semiconductor nanowires for LED and solar cell applications will be described.

Semiconductor nanowires for energy applications

244th National Meeting (2012)

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