Tin(IV) oxide is a transparent conducting solid with many known applications. An ALD method to deposit tin(IV) oxide was developed using tetraethyltin (TET) and ozone.  Tetraethyltin is a stable liquid between its freezing point at -112�C and its boiling point at 181�C. Its vapor pressure at 25�C is 0.5 Torr. Self-limiting growth indicative of a true ALD process yielded a thickness/cycle of 0.15 nm at 250�C. Rutherford backscattering spectrometry established an elemental composition consistent with tin(IV) oxide. Carbon concentrations in the films were below detection limits of RBS and Auger electron spectroscopy. No reflections were observed using X-ray diffraction indicating that the as-deposited films were amorphous. Electrical and optical properties were measured using both as-deposited and annealed films. Density functional theory using M06 and M06-L functionals was used to shed light on the mechanisms of the individual steps occurring in the ALD process.

Atomic layer deposition (ALD) of tin(IV) oxide films using tetraethyl tin and ozone

244th National Meeting (2012)

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