Antireflective thin films (AR) have been shown to improve the efficiency of cadmium telluride (CdTe) and copper indium gallium selenide (CIGS) solar panels on glass substrates. Here we report the atmospheric pressure chemical vapor deposition (APCVD) of SiO2-MO2 thin film fabrication from single source heterometallic alkoxides ([(RO)3SiO]4-xM(OR')x) precursors. The APCVD process is a cost-effective route to the production of high quality thin films due to the ease of integration into float glass production lines to allow for deposition under a manufacturing environment. We will present the synthesis and characterization of the heterometallic alkoxide single source precursors and details of the thin film deposition process. These include the optimized parameters for thin film deposition, preliminary mechanism of deposition process, and detailed characterization of AR films.

Atmospheric pressure chemical vapor deposition of antireflective thin films from heterometallic alkoxide precursors

245th National Meeting (2013)

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