Hematite (a-Fe2O3) posses a relatively low band gap and favorable valence band for use as a water oxidation material. In addition, a-Fe2O3 is abundant in the Earth's crust and is electrochemically stable in neutral and basic solutions. The efficient use of a-Fe2O3 has generally been prevented, however, due to poor charge separation due to a low minority carrier mobility and poor charge collection by adsorbed water species resulting in the necessity of a large applied potential. Herein, atomic layer deposition (ALD) is used to deposit thin layers of NiO, a p-type semiconductor, onto thin film a-Fe2O3, an n-type semiconductor, also prepared by ALD.  An enhanced photocurrent and current onset potential was observed for water oxidation at Fe2O3-NiO electrodes versus bare a-Fe2O3 electrodes. Electrochemical impedance spectroscopy and photoelectrochemical measurements were used to systematically study the enhanced charge separation and surface water oxidation properties of the Fe2O3-NiO electrode

Investigation of improved solar water oxidation properties with NiO coated Fe<sub>2</sub>O<sub>3</sub> electrodes by electrochemical impedance spectroscopy and photoelectrochemical measurements

245th National Meeting (2013)

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Investigation of improved solar water oxidation properties with NiO coated Fe2O3 electrodes by electrochemical impedance spectroscopy and photoelectrochemical measurements

Investigation of improved solar water oxidation properties with NiO coated Fe₂O₃ electrodes by electrochemical impedance spectroscopy and photoelectrochemical measurements