The most straightforward procedure for fabricating inorganic semiconductor films is through solution processing because of the potential for low-cost and low-temperature deposition; however, the application of this method is frustrated by the low solubility of most inorganic semiconductors in known solvents.  There are exceptions, such as a number of metal chalcogenides that are soluble as chalcogenometallate cations in the toxic and reactive hydrazinium chalcogenide/hydrazine combination.  We have developed strongly coordinating binary solvent mixtures capable of dissolving a range of technologically important arsenic, antimony, and bismuth chalcogenides at room temperature.  Solution deposition of phase-pure and highly crystalline metal chalcogenides was achieved upon drying and low-temperature annealing without the need for excess chalcogen, and the resulting films were characterized by physical, optical, and electronic techniques.  These results point the way forward to a facile and environmentally safer semiconductor solution processing technology for optical, electronic, photovoltaic, and thermoelectric applications.

Solution processing of V<sub>2</sub>VI<sub>3</sub> semiconductors via non-hazardous solvent mixtures

245th National Meeting (2013)

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Solution processing of V2VI3 semiconductors via non-hazardous solvent mixtures

Solution processing of V₂VI₃ semiconductors via non-hazardous solvent mixtures