Graphene has become the focus of extensive experimental and theoretical investigations due to its remarkable properties and novel applications. Being an atomic-thick layer, the ideal 2D graphene is a zero-gap semiconductor. In this talk, we present the results of first-principles study of electronic properties of graphene and related heterostructures. Our calculations are based on the van-der-Walls-corrected density functional theory in conjunction with the non-equilibrium Green's Function method. The calculated results are expected to provide a fundamental understanding of the mechanism of electron transport which can be used to develop nanoscale devices based on graphene heterostructures.

Electronic transport in graphene-based heterostructures

245th National Meeting (2013)

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