High-resolution scanning tunneling microscopy (STM) has led to significant process in understanding the structure and reactivity of oxide surfaces, but is virtually impossible on bulk samples of high-bandgap insulator such as Al2O3 and ZrO2. This problem is circumvented by studies of ultrathin oxides, which provide sufficient conductivity. The talk will describe a few rules for successful preparation of ultrathin oxides by oxidation of an alloy and examples of STM contributions to understanding the crystallography of these films [1-3]. Growth of metals on ultrathin oxides leads to a variety of structures, from single adatoms via well-ordered almost monodisperse clusters [4] to large almost bulk-like particles and films. Binding of metals to these oxides will be also discussed; the ZrO2 surface, though oxygen terminated, strongly binds to metals via its Zr atoms [3].[1] Kresse et al. (2005), Science 308, 1440[2] Schmid et al. (2007), Phys. Rev. Lett. 99, 196104[3] Antlanger et al. (2012), Phys. Rev. B 86, 035451[4] Buchsbaum et al. (2010), Phys. Rev. B 81, 115420

Ultrathin alumina and zirconia: An STM view

245th National Meeting (2013)

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