Using scanning tunneling microscopy and spectroscopy (STM/STS), the electronic properties of isolated dangling bond (IDB) defects on variously doped n and p-type water saturated Si(001) � 2 x 1 surfaces are examined. Analysis of the IDB surface density and STM tip height at the IDB defects for samples of different dopant type and concentration provide valuable insight into the reactivity of the unsaturated surfaces, as well as the electronic structure of the IDBs. The information acquired from the topological height maps of the STM images is then correlated to STS curves of the IDB defects on the variously doped sample surfaces. Using this data, further insight is garnered toward an explanation of the IDB charge state, which is neutral for all dopant concentrations except for heavily doped n-type silicon, which is negatively charged.

STM analysis of the electronic structure of isolated dangling bonds on variously doped water-saturated Si(001)-2 x 1 surfaces

245th National Meeting (2013)

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