The technique of MOCVD, which consists of decomposing a metal-containing organic precursor on solid substrates, can be used to grow nanostructured inorganic and semiconducting materials. A striking variety of structures can be obtained by changing parameters such as precursor nature, substrate, pressure, temperature, etc. Here we will show our results concerning the growth by MOCVD of GaP/GaInP heterostructures with type II interfaces. These type II interfaces allow the separation of electrical charges (by interface energy band-bending) upon light excitation, making them very interesting for photocell applications. We will also present preliminary results on the growth of gallium microspheres with fractal-type nanostructured coverages.

Growth of semiconducting heterostructures by MOCVD

245th National Meeting (2013)

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