We have identified and quantified the concentration of two classes of chemical dopants in CdSe nanocrystal solutions terminated with halide anionic ligands: CdCl2 and HCl:lewis-base adducts. We have found that the concentration of both species strongly impacts the measured carrier concentration and mobility in thin film transistors, achieving 10 cm2/Vs electron mobility without In doping. Additionally, we have observed growth of 50-100 nm grains in films at temperatures as low as 300 �C by controlling the concentrations of these dopants. These findings have implications for the fabrication of photovoltaic and optoelectronic devices from semiconductor nanocrystals.

Identification of chemical dopants in thin films of CdSe nanocrystals and their relation to mobility, carrier concentration, and crystal grain growth

245th National Meeting (2013)

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