Uniform thin films of hematite (a-Fe2O3) and Ti-doped hematite were deposited on transparent conductive substrates using atomic layer deposition (ALD). ALD's epitaxial growth mechanism allowed controlling the morphology and thickness of the hematite films as well as the concentration and distribution of Ti atoms. The photoelectrochemical performance of Ti-doped and undoped hematite electrodes were examined and compared under water oxidation conditions. Doping hematite electrodes with Ti was found to dramatically enhance the water oxidation performance, with much greater enhancements found for the thinnest films. A series of electrochemical, photoelectrochemical and impedance spectroscopy measurements were employed to elucidate the cause of the improved photoactivity of the Ti-doped hematite thin films. This performance enhancement was a combination of improved bulk properties (hole collection length) and surface properties (water oxidation efficiency). The improvement in both bulk and surface are attributed to the resurrection of a dead layer by the Ti dopant atoms.

Enhancing solar water oxidation performance of α-Fe<sub>2</sub>O<sub>3</sub> thin film electrodes by Ti-doping: Resurrection of the dead layer

245th National Meeting (2013)

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Enhancing solar water oxidation performance of α-Fe2O3 thin film electrodes by Ti-doping: Resurrection of the dead layer

Enhancing solar water oxidation performance of α-Fe₂O₃ thin film electrodes by Ti-doping: Resurrection of the dead layer