Mg-doped CuFeO2 material was prepared by solid-state synthetic methods, pressed into pellets and assembled as electrodes. A cathodic photocurrent was observed under visible light irradiation (340 nm < ? < 780 nm), which decreased with an increasing Mg doping concentration from 1�1019 cm-3 (CuFeO2, doped with 0.005% Mg) to 1�1020 cm-3(CuFeO2, doped with 0.05% Mg).  The incident-photon-to-current quantum yield at 340 nm was 14 % at an applied potential of -0.4 V vs. SCE. The CuFeO2 electrode was found to have an optical band gap of 1.36 eV with the conduction band edge located at ~ -1.0 V vs. SCE. Electrolysis studies show that this material converts CO2 to formate at a relatively low overpotential.

Development of p-type CuFeO<sub>2</sub> photoelectrodes: Potential semiconductor electrodes for CO<sub>2</sub> reduction

245th National Meeting (2013)

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Development of p-type CuFeO2 photoelectrodes: Potential semiconductor electrodes for CO2 reduction

Development of p-type CuFeO₂ photoelectrodes: Potential semiconductor electrodes for CO₂ reduction