Frequency-dependent dielectric properties of electrical components are required to fabricate sensors and electronic devices operating in the far-infrared terahertz frequency range.  This paper reports the dielectric properties of several metal oxides probed by Terahertz-Time Domain Spectroscopy (THz-TDS).  By utilizing THz-TDS, the complex refractive index and related complex permittivity have been found in the spectral range from 0.2 THz to 3.5 THz.   Metal oxides probed include NiO, ZnO, Ta2O5, and Nb2O5.  These oxides are of particular interest as materials for rectifying diodes of terahertz radiation.  An important characteristic of diodes constructed from these materials is the RC time constant of the diode.  To efficiently rectify electromagnetic radiation at these high frequencies, the time constant of the diode needs to be as small as possible.  A brief discussion will focus on the underlying importance between the RC time constant and complex permittivity; and the resulting effect on efficient diode design.

Terahertz dielectric properties of metal oxides

245th National Meeting (2013)

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