Zinc sulfide (ZnS) thin films were deposited on the unoxidized surface of silicon  wafers using the chemical bath deposition (CBD) method with microwave heating and oxygen-free conditions. Film thickness, roughness and crystallinity were characterized by profilometry, atomic force microscopy (AFM) and x-ray diffraction (XRD), respectively. The elemental compositions of ZnS films and ZnS/Si interfaces were characterized with time-of-flight secondary ion mass spectrometry (ToF-SIMS). Bath conditions such as temperature and concentration of precursors were varied and related to film properties such as thickness, roughness, crystallinity and crystal orientation.

Oxygen free chemical bath deposition of ZnS thin films on (111) silicon

245th National Meeting (2013)

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